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IC grade monocrystalline silicon ingot

IC grade monocrystalline silicon ingot-PM-ICI0511E
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Features: IC Grade Monocrystalline Silicon Ingot, 1.Growth method :CZ, 2.Conductive type: N/P, 3.Dopants:Phos.Sb.As/Boron
Quick Brief: Weight: 10kg, Dimensions: 3"-8", Alloy Or Not: Non-alloy, Secondary Or Not: Non-secondary, Resistance (μΩ.m): 0.001-150ohm.cm, Conductivity Type: N type and Ptype, Place of Origin: Shanghai China (Mainland), Brand Name: panmeng, Model Number: PM-ICI0511E, color: gray

IC grade monocrystalline silicon ingot

IC grade monocrystalline silicon ingot-PM-ICI003
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Features: IC grade mono silicon ingot, 1.N/P type, 2.Dopant phos, As, Sb, Boron, 3.Growth Method:CZ, 4.Resistivity:>0.001 ohm.cm
Quick Brief: Weight: 14-20KG, Dimensions: 3"-8", Alloy Or Not: Non-alloy, Secondary Or Not: Non-secondary, Resistance (μΩ.m): 0.001-150ohm.cm, Conductivity Type: N type and Ptype, Place of Origin: Shanghai China (Mainland), Brand Name: panmeng, Model Number: PM-ICI003, color: gray

IC Grade Mono Ingot

IC Grade Mono Ingot-PM-ICI0042
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Features: IC Grade Monocrystalline Silicon Ingot, 1.N/P type, 2.Dopant phos, As, Sb, Boron, 3.Growth Method:CZ,
Quick Brief: Weight: 14-20KG, Dimensions: 3"-8", Alloy Or Not: Non-alloy, Secondary Or Not: Non-secondary, Resistance (μΩ.m): 0.001-150ohm.cm, Conductivity Type: N type and Ptype, Place of Origin: Shanghai China (Mainland), Brand Name: panmeng, Model Number: PM-ICI0042, color: gray

Dopant Boron IC silicon ingot

Dopant Boron IC silicon ingot-PM-SI
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Features: Dopant Boron IC silicon ingot, 1.Growth method:CZ, 2.Dimention:3'' 4'' 5'' 6'' 8'', 3.Orientation:<111> <100>
Quick Brief: Weight: 14-20KG, Dimensions: 3"-8", Alloy Or Not: Non-alloy, Secondary Or Not: Non-secondary, Resistance (μΩ.m): 0.001-150ohm.cm, Conductivity Type: N/P, Place of Origin: Shanghai China (Mainland), Brand Name: PANMENG, Model Number: PM-SI, SIZE: 3''-8", Conductivity: N/P

SEMI/IC Grade Monosilicon Ingots

SEMI/IC Grade Monosilicon Ingots-PM-ICI
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Features: SEMI/IC Grade Monosilicon Ingots, 1.type N/P, 2.Dopant phos, As, Sb, Boron, 3.Growth Method:CZ
Quick Brief: Weight: 14-20KG, Dimensions: 3"-8", Alloy Or Not: Non-alloy, Secondary Or Not: Non-secondary, Resistance (μΩ.m): 0.001-150ohm.cm, Conductivity Type: N/P, Place of Origin: Shanghai China (Mainland), Brand Name: Panmeng, Model Number: PM-ICI, Size: 3''-8'', Type: N/P

IC grade FZ monocrystalline silicon ingot

IC grade FZ monocrystalline silicon ingot-PM-ICI
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Features: IC Grade FZ Monocrystalline Silicon Ingot, 1.N/P type, 2.Dopant phos, As, Sb, Boron, 3.Growth Method:CZ, FZ
Quick Brief: Weight: 14-20KG, Dimensions: 3"-8", Alloy Or Not: Non-alloy, Secondary Or Not: Non-secondary, Resistance (μΩ.m): 0.001-150ohm.cm, Conductivity Type: N/P, Place of Origin: Shanghai China (Mainland), Brand Name: Panmeng, Model Number: PM-ICI, Size: 3''-8", Type: N/P

IC Grade Monocrystalline Silicon Ingots

IC Grade Monocrystalline Silicon Ingots-PMICI
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Features: IC Grade Monocrystalline Silicon Ingots, Grade: IC grade, Groth method:CZ, Size: 3"-8", Type:N / P
Quick Brief: Weight: 14-20kg, Dimensions: 3''-8'', Alloy Or Not: Non-alloy, Secondary Or Not: Non-secondary, Resistance (μΩ.m): 0.001-150ohm.cm, Conductivity Type: N type and Ptype, Place of Origin: Shanghai China (Mainland), Brand Name: panmeng, Model Number: PMICI, color: gray

IC Grade Monocrystalline Silicon Ingots

IC Grade Monocrystalline Silicon Ingots-PM-ICI05
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Features: IC Grade Monocrystalline Silicon Ingots, 1.Growth method :CZ, 2.Orientation :<111><100>, 3.Conductive type:N/P
Quick Brief: Weight: 10kg, Dimensions: 3"-8", Alloy Or Not: Non-alloy, Secondary Or Not: Non-secondary, Resistance (μΩ.m): 0.001-150ohm.cm, Conductivity Type: N type and Ptype, Place of Origin: Shanghai China (Mainland), Brand Name: panmeng, Model Number: PM-ICI05, color: gray

IC Grade Mono Silicon Ingot

IC Grade Mono Silicon Ingot-PM-ICI
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Features: IC Grade Mono Silicon Ingot, 1.N/P type, 2.Resistivity :0.001-150ohm.cm, 3.Growth Method:CZ
Quick Brief: Weight: 14-20KG, Dimensions: 3"-8", Alloy Or Not: Non-alloy, Secondary Or Not: Non-secondary, Resistance (μΩ.m): 0.001-150ohm.cm, Conductivity Type: N/P, Place of Origin: Shanghai China (Mainland), Brand Name: Panmeng, Model Number: PM-ICI, Size: 3''-8'', Type: N/P

IC mono silicon ingot

IC mono silicon ingot-PM-ICI026
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Features: IC Grade Monocrystalline Silicon Ingot, 1.N/P type, 2.Dopant phos, As, Sb, Boron, 3.Growth Method:CZ, 4.<111><100>
Quick Brief: Weight: 14-20KG, Dimensions: 3"4"6"8", Alloy Or Not: Non-alloy, Secondary Or Not: Non-secondary, Resistance (μΩ.m): 0.001-150ohm.cm, Conductivity Type: N type and Ptype, Place of Origin: Shanghai China (Mainland), Brand Name: panmeng, Model Number: PM-ICI026, color: gray

IC grade mono silicon ingot

IC grade mono silicon ingot-PM-ICI0062
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Features: IC grade mono silicon ingot, 1.N/P type, 2.Dopant phos, As, Sb, Boron, 3.Growth Method:CZ,
Quick Brief: Weight: 14-20KG, Dimensions: 3"-8", Alloy Or Not: Non-alloy, Secondary Or Not: Non-secondary, Resistance (μΩ.m): 0.001-150ohm.cm, Conductivity Type: N type and Ptype, Place of Origin: Shanghai China (Mainland), Brand Name: panmeng, Model Number: PM-ICI0062, color: gray

IC grade mono silicon ingot

IC grade mono silicon ingot-PM-ICI0516A
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Features: IC Grade Monocrystalline Silicon Ingot, 1.N/P type, 2.Dopant phos, As, Sb, Boron, 3.Growth Method:CZ, FZ
Quick Brief: Weight: 14-20KG, Dimensions: 3"-8", Alloy Or Not: Non-alloy, Secondary Or Not: Non-secondary, Resistance (μΩ.m): 0.001-150ohm.cm, Conductivity Type: N/P, Place of Origin: Shanghai China (Mainland), Brand Name: PANMENG, Model Number: PM-ICI0516A, SIZE: 3''-8", Conductivity: N/P

IC Grade Monocrystalline Silicon Ingots

IC Grade Monocrystalline Silicon Ingots-PM-ICI05
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Features: IC Grade Monocrystalline Silicon Ingots, 1.Growth method :CZ, 2.Conductive type: N/P, 3.Dopants:Phos.Sb.As/Boron
Quick Brief: Weight: 10kg, Dimensions: 3"-8", Alloy Or Not: Non-alloy, Secondary Or Not: Non-secondary, Resistance (μΩ.m): 0.001-150ohm.cm, Conductivity Type: N type and Ptype, Place of Origin: Shanghai China (Mainland), Brand Name: panmeng, Model Number: PM-ICI05, color: gray

IC grade mono silicon ingot

IC grade mono silicon ingot-PM-ICI019
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Features: IC Grade Monocrystalline Silicon Ingots, 1.N/P type, 2.Dopant phos, As, Sb, Boron, 3.Growth Method:CZ,
Quick Brief: Weight: 14-20KG, Dimensions: 3"4"6", Alloy Or Not: Non-alloy, Secondary Or Not: Non-secondary, Resistance (μΩ.m): 0.001-150ohm.cm, Conductivity Type: N type and Ptype, Place of Origin: Shandong China (Mainland), Brand Name: panmeng, Model Number: PM-ICI019, color: gray

IC grade mono silicon ingot

IC grade mono silicon ingot-PM-HDI
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Features: IC grade mono silicon ingot, 1.Dopant: As, Sb, Phosp, 2.Orientation:<111><100>, 3.Growth Method:CZ
Quick Brief: Weight: 10-15kg, Dimensions: 11N, Alloy Or Not: Non-alloy, Secondary Or Not: Non-secondary, Resistance (μΩ.m): 0.001-150 ohm.cm, Conductivity Type: N, Place of Origin: Shanghai China (Mainland), Brand Name: Panmeng, Model Number: PM-HDI, Color: gray

6' IC grade monocrystalline silicon ingot

6&#39; IC grade monocrystalline silicon ingot-PM-ICI025
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Features: 6' IC grade monocrystalline silicon ingot, 1.N type, 2.Dopant Phos., 3.Growth Method:CZ, 4.Resistivity :0.001-150 ohm.cm
Quick Brief: Weight: 20KG, Dimensions: 3"4"6"8", Alloy Or Not: Non-alloy, Secondary Or Not: Non-secondary, Resistance (μΩ.m): 0.005-150, Conductivity Type: N type, Place of Origin: Shanghai China (Mainland), Brand Name: panmeng, Model Number: PM-ICI025, color: gray

Dopant Phos IC silicon ingot

Dopant Phos IC silicon ingot-PM-SI
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Features: Dopant Phos IC silicon ingot, 1.Growth method:CZ, 2.Dimention:3'' 4'' 5'' 6'' 8'', 3.Orientation:<111> <100>
Quick Brief: Weight: 14-20KG, Dimensions: 3"-8", Alloy Or Not: Non-alloy, Secondary Or Not: Non-secondary, Resistance (μΩ.m): 0.001-150ohm.cm, Conductivity Type: N/P, Place of Origin: Shanghai China (Mainland), Brand Name: PANMENG, Model Number: PM-SI, SIZE: 3''-8", Conductivity: N/P

silicon ingot

silicon ingot-PM-ICI
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Features: IC grade mono silicon ingot, Growth method:FZ, Dimention:3'' 4'' 5'' 6'', Orientation:<111> <100>
Quick Brief: Weight: 14-20KG, Dimensions: 3"-8", Alloy Or Not: Non-alloy, Secondary Or Not: Non-secondary, Resistance (μΩ.m): 0.001-150ohm-cm, Conductivity Type: N/P, Place of Origin: Shanghai China (Mainland), Brand Name: Panmeng, Model Number: PM-ICI, Type: N/P

Large diameter silicon ingot

Large diameter silicon ingot-PM-LDI
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Features: Large diameter silicon ingot, 1.Size :10"-16", 2.Type :P-type, 3.Resistivity:>0.001ohm
Quick Brief: Weight: 50kg, Dimensions: 11N, Alloy Or Not: Non-alloy, Secondary Or Not: Non-secondary, Resistance (μΩ.m): >0.001ohm.cm, Conductivity Type: P type, Place of Origin: Shanghai China (Mainland), Brand Name: PM, Model Number: PM-LDI, Color: Gray

IC grade mono silicon ingot

IC grade mono silicon ingot-PM-ICI0035
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Features: IC grade mono silicon ingot, 1.N/P type, 2.Dopant phos, As, Sb, Boron, 3.Growth Method:CZ, FZ
Quick Brief: Weight: 14-20KG, Dimensions: 3"-8", Alloy Or Not: Non-alloy, Secondary Or Not: Non-secondary, Resistance (μΩ.m): 0.001-150ohm.cm, Conductivity Type: N type and Ptype, Place of Origin: Shanghai China (Mainland), Brand Name: panmeng, Model Number: PM-ICI0035, color: gray

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